Basic Electronics Paper 2, WASSCE (PC 2ND), 2021

Question 3

       

  1.    Define the term doping with respect to semiconductors.
  2.    State two advantages of transistors over triodes.
  3.    Figure 2 is a schematic diagram of a p-n junction diode.

 

 

  1. Redraw Figure 2, and connect a battery to forward bias the junction.
  2. State the effect of connecting in 3(c)(i) on the junction width (w).
  3. Draw and label a circuit symbol of a p-n junction diode.

 

The expected responses were:

 

(a)        Definition of the term doping
This is the introduction of impurities into an intrinsic semiconductor to modify or change
its electrical properties.                                               
(b)        Advantages of transistors over diodes

  • Faster response time
  • Less heat generation
  • More robust
  • Portability/less bulky
  • Miniature in size/compactness
  • Better efficiency
  • Lower power consumption
  • Cheaper to manufacture                          

(c)  (i)  Forward biasing a p-n Junction diode
                                                
(ii)   Effect of forward biasing the p-n junction on the junction width(w)is:        
The width (w) gets thinner/narrower.                                                            
(iii)             Circuit symbol of a p-n junction diode


The Chief Examiner reported that virtually all the candidates that attempted this question gave the correct definition of doping and majority showed the desired battery connection for forward-biased diode. However, only a few showed understanding of the consequence of the forward bias on depletion layer.